건축도시공간연구소

Architecture & Urban Research Institute

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전력전자학회|논문지 2021년 6월

논문명 Rogowski Coil 기반의 전류 센싱 회로를 적용한 SiC MOSFET 단락 보호 회로 설계 / Short-circuit Protection Circuit Design for SiC MOSFET Using Current Sensing Circuit Based on Rogowski Coil
저자명 이주아 ; 변종은 ; 안상준 ; 손원진 ; 이병국
발행사 전력전자학회
수록사항 전력전자학회 논문지, Vol.26 No.3 (2021-06)
페이지 시작페이지(214) 총페이지(8)
ISSN 1229-2214
주제분류 환경및설비
주제어 ; Rogowski coil; Current sensing; Short-circuit protection; SiC MOSFET; Wide band gap
요약2 SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.
소장처 전력전자학회
언어 한국어
DOI 10.6113/TKPE.2021.26.3.214